2SK2611 900V 9A N-Channel Power MOSFET (TO-3PN Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 1.1Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
SKU: BV8542A
2SK2611 900V 9A N-Channel Power MOSFET (TO-3PN Package)
The 2SK2611 is a 900V, 9A N-Channel Power MOSFET housed in a TO-3PN package, designed for high-voltage switching and efficient power control in industrial and electronic systems. This MOSFET is ideal for applications such as switch-mode power supplies (SMPS), motor drives, lighting systems, and other high-voltage power circuits where reliable and efficient operation is critical. Key features of the 2SK2611 include a maximum drain-to-source voltage of 900V, enabling it to handle high-voltage operations, and a continuous drain current of 9A, suitable for moderate power requirements. Its low on-resistance reduces conduction losses, enhancing energy efficiency. Additionally, the device supports fast switching speeds, minimizing switching losses and making it suitable for high-frequency applications. The TO-3PN package ensures effective thermal management, with robust construction for improved heat dissipation and reliable operation in harsh environments. This durability makes it suitable for applications requiring long-term stability and performance under demanding conditions.
Features:-
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
