2SK2717 900V 5A N-Channel Power MOSFET (TO-220F Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 5A
- Drain-Source Resistance (Rds On): 2.5Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 137 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 45W
SKU: CI8542A
2SK2717 900V 5A N-Channel Power MOSFET (TO-220F Package)
The 2SK2717 is a high-performance N-channel power MOSFET designed to handle demanding power switching applications. With a drain-to-source voltage rating of 900V and a continuous drain current of 5A, this MOSFET is suitable for high-voltage circuits that require efficient, reliable performance. It is packaged in a TO-220F package, which ensures robust thermal performance and easy mounting on heatsinks for improved heat dissipation, even under high-load conditions. The 2SK2717 offers low on-resistance, which helps reduce power losses during operation, making it efficient for use in power supplies, motor drivers, and inverters. The high voltage rating and low conduction losses make it an excellent choice for high-voltage applications, such as DC-DC converters, switching regulators, and electrical vehicle (EV) power systems, where high efficiency is crucial. This MOSFET’s high switching speed and ruggedness allow it to operate reliably in a variety of industrial applications, including automotive, telecommunications, and energy systems. Its high-voltage capability combined with low on-resistance ensures it can handle demanding tasks without significant heat generation, resulting in increased reliability and longevity for the system in which it is used.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling