2SK3878 900V 9A N-Channel Power MOSFET (TO-3P Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 1Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 60 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
SKU: XD8542A
2SK3878 900V 9A N-Channel Power MOSFET (TO-3P Package)
The 2SK3878 is a 900V, 9A N-Channel Power MOSFET housed in a TO-3P package, designed for high-voltage switching applications. With a 900V drain-to-source voltage rating, this MOSFET is suitable for demanding applications that require high-voltage handling, such as power supplies, inverters, and motor control circuits. This device can handle up to 9A of continuous drain current, making it well-suited for circuits with moderate current requirements, where both high voltage and high current are involved. The low on-resistance of the 2SK3878 ensures efficient power conduction with minimal power loss during operation, helping to reduce thermal stress and improve overall system efficiency. The TO-3P package offers excellent thermal performance and is designed to dissipate heat effectively, which is critical in high-power applications. This package allows the device to handle significant power dissipation while maintaining stable operation under various loads.
Features:-
- Low gate charge (Typ. 90 nC)
- Low crss (Typ. 70 pF)
- Fast switching
- Ease of paralleling
