Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 8A
- Drain-Source Resistance (Rds On): 20Ohms
- Gate-Source Voltage (Vgs): 20V
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
SKU: JD8542A
2SK962 900V 8A N-Channel Silicon Power MOSFET (TO-3P Package)
The 2SK962 is a 900V, 8A N-channel Silicon Power MOSFET housed in a TO-3P package, designed for high-voltage and high-current applications. This MOSFET is ideal for use in power circuits that require robust performance under high voltage conditions, such as motor control systems, switching power supplies, and inverters. With a drain-to-source voltage of 900V, the 2SK962 can handle demanding voltage levels, making it suitable for industrial applications that operate with higher voltage requirements. Its continuous drain current of 8A enables it to drive significant loads while maintaining excellent switching and conduction performance. Key features of the 2SK962 include its low resistance, which minimizes conduction losses, and its high-speed switching capabilities, making it efficient for high-frequency operation. This MOSFET is particularly advantageous for power management applications where minimizing energy loss is critical. Additionally, the TO-3P package offers superior thermal management, providing better heat dissipation during high-load operations, which enhances the reliability of the component in demanding environments.
Features:-
- High speed switching
- Low on-resistance
- Ease of paralleling
- Simple Drive Requirements
