Specification:-
- Drain-Source Voltage: 50 V
- Gate-Source Voltage: ± 20 V
- Drain Current Continuous: 200 mA
- Drain Current Pulsed (tp≤10µS): 800 mA
- Drain Power Dissipation: 225 mW
- Thermal Resistance, Junction to Ambient: 556°C/W
- Storage Temperature Range: -55 to +150 °C
SKU: DN8542A
BSS138 50V N-Channel Enhancement Mode MOSFET
The BSS138 is a compact N-Channel Enhancement Mode MOSFET designed for low-power switching and level-shifting applications. With a maximum drain-to-source voltage f 50V and a continuous drain current rating of 200mA, it is a versatile choice for small-signal and low-power electronic circuits. This MOSFET is encapsulated in the SOT-23 package, making it ideal for space-constrained PCB layouts and modern compact designs. One of the key advantages of the BSS138 is its low of <3Ω at a gate-source voltage of 10V, ensuring minimal power loss during operation. Additionally, it features a low gate threshold voltage starting around 1.3V, which makes it suitable for direct interfacing with low-voltage logic circuits, such as microcontrollers and digital ICs.
Features:-
- Low- on resistance
- Easy to parallel
- Easy Designed drive circuit
- Best Quality
