MJE3055T NPN Transistors 60V (TO-220 Package) Pack of 5
- Transistor Polarity - NPN
- Collector-Emitter Voltage (VCEO) - 60V
- Continuous Base Current (IB) - 3A
- Continuous Collector Current (IC) - 10A
- Emitter cut-off current (IC) - 500mA
- DC Current Gain (hFE) - 20
- Operating Temperature Range - (-65 - 150°C)
- Transition Frequency (fT) - 2MHz
SKU: NJ8541E
MJE3055T NPN Transistors 60V (TO-220 Package) Pack of 5
A silicon epitaxial-base NPN transistor is the MJE3055T. The three-layer NPN or PNP MJE3055T device's collector current IC is a function of the base current IB, and for a given collector-emitter voltage VCE, a change in the base current results in an amplified change in the collector current. It is for general-purpose amplifier power-switching circuits. Reduced switching and conduction losses are the result of quick switching times and extremely low saturation voltage. The three-layer NPN or PNP MJE3055T device's collector current is a function of the base current, and for a given collector-emitter voltage VCE, a change in the base current will result in an amplified change in the collector current. NPN Power Transistor MJE3055T, 60V, 10A, TO-220 Package. These power transistors are intended for use in switching and general-purpose amplifiers. The MJE3055T is a general-purpose NPN power transistor housed in a hermetically sealed metal container and produced using the epitaxial base method. The switching and amplifier applications for this device are general-purpose.
Features:-
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
- High power and current handling capability
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Frequently Bought Together
@ ₹168/-
