FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 48A
- Drain-Source Resistance (Rds On): 105mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 137 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 625W
SKU: HT8542A
FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)
The FDA50N50 is a high-performance N-Channel Power MOSFET designed to handle demanding applications that require high-voltage and high-current capabilities. With a drain-to-source voltage (V rating of 500V and a continuous drain current of 48A, it is well-suited for power-switching applications where efficiency and reliability are critical. Housed in a TO-3PN package, this MOSFET offers robust thermal management, ensuring that heat is effectively dissipated during operation, which helps maintain stability and extends the life of the device. The FDA50N50 features a low on-resistance, which minimizes conduction losses and enhances efficiency in power applications, making it ideal for high-frequency switching and motor control circuits. This MOSFET is particularly suitable for DC-DC converters, power inverters, and motor driver circuits, as well as switching power supplies where high voltage and high current handling are required. Its high thermal stability and ruggedness make it a reliable choice for power electronics that need to operate in harsh environments or under heavy loads.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
