FDP090N10 100V 75A N-Channel Power Trench MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 75A
- Drain-Source Resistance (Rds On): 9mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 116 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 208W
SKU: MA8542A
FDP090N10 100V 75A N-Channel Power Trench MOSFET (TO-220 Package)
The FDP090N10 is a 100V, 75A N-Channel Power Trench MOSFET designed to deliver high efficiency and excellent performance in a variety of power-switching applications. Housed in the TO-220 package, this MOSFET is optimized for high-current switching with low on-resistance, enabling low conduction losses and making it ideal for power conversion and motor control circuits. With a drain-to-source voltage rating of 100V, the FDP090N10 can handle moderately high voltage levels while maintaining low power loss. Its 75A continuous drain current capability ensures that it can handle demanding loads, making it suitable for use in DC-DC converters, motor controllers, and power supplies where efficient switching and current handling are essential. The Power Trench MOSFET design of the FDP090N10 provides high-speed switching performance with minimal switching losses, which is particularly beneficial in high-frequency applications. Its low gate charge and low threshold voltage make it easy to drive, and it exhibits low gate-to-drain capacitance, contributing to faster switching times and reduced switching losses.
Features:-
- Dynamic dV/dt rating
- Ultra-low on-resistance
- Fast switching
- Ease of paralleling
