FQA69N30 300V N-Channel Power MOSFET
Specification:-
- Type: MOSFET
- Package: TO-3PN
- No of leads: 3
- Gate source voltage: 30V
- Power dissipation: 310W
- Drain source voltage: 300V
SKU: SS8542A
FQA69N30 300V N-Channel Power MOSFET
The FQA69N30 is a 300V N-Channel Power MOSFET designed for high-efficiency and high-current applications. This device features a maximum drain current of 69A and a drain-to-source voltage rating of 300V, making it suitable for high-voltage, high-power switching applications such as motor controls, power supplies, and inverters. Key characteristics of the FQA69N30 include its low on-resistance which helps to reduce conduction losses, and its capability to operate efficiently at high switching frequencies. The MOSFET is also designed with robust avalanche energy ratings, providing reliability during transient overvoltage conditions. Housed in a TO-3P package, the FQA69N30 ensures excellent thermal performance, allowing for effective heat dissipation in high-power designs. This package is well-suited for mounting on heatsinks, further enhancing thermal management and operational reliability under high-load conditions.
Features:-
- Highly reliable
- Small in size
- Fast switching
- Ease of paralleling