Specification:-
- Package: SOT-23-6
- Drain-Source Voltage: 20V
- Gate- Source Voltage: +8V
- Drain Current: 5.0A
- Drain Current: 20A
- Thermal Resistance Junction-Ambient : 78℃/W
- Thermal Resistance Junction-Case: 40℃/W
- Junction/Storage Temperature: -55~150℃
SKU: FQ8539A
GM8205A Mosfet Dual N-Channel Transistor 20V SOT-23-6
The GM8205A is a dual N-channel MOSFET transistor housed in a compact SOT-23-6 package, designed for high-efficiency switching and power management applications. With a maximum drain-source voltage (Vds) of 20V and low on-resistance, it delivers excellent performance in low-voltage DC-DC converters, load switching, and battery-operated devices. Its compact SOT-23-6 footprint ensures space-saving PCB designs, making it ideal for applications requiring high-density layouts. The GM8205A features fast switching speeds and low gate charge, resulting in reduced power losses and improved efficiency. Its dual N-channel configuration allows for versatile use, including synchronous rectification and bidirectional switching. This MOSFET is well-suited for use in portable electronics, LED drivers, and other power-sensitive devices, offering reliable performance and high integration for cost-effective designs.
Features:-
- SOT-23-6 for space-efficient PCB designs
- Ensures minimal power loss and high efficiency
- Ideal for high-frequency applications
- Reduces power consumption in switching applications