IRF1010 60V 84A N-Channel HEXFET Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 60V
- Continuous Drain Current (Id): 84A
- Drain-Source Resistance (Rds On): 12mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 200W
SKU: BE8542A
IRF1010 60V 84A N-Channel HEXFET Power MOSFET (TO-220 Package)
The IRF1010 is a 60V, 84A N-Channel HEXFET Power MOSFET, designed for high-efficiency and high-current switching applications. Encased in a TO-220 package, this MOSFET delivers outstanding electrical performance while maintaining a compact and thermally efficient form factor. This device is characterized by its low on-resistance of approximately 0.012Ω, which minimizes conduction losses and improves system efficiency, especially in high-current scenarios. The 60V drain-to-source voltage and 84A continuous drain current ratings make it ideal for low to medium-voltage power applications such as DC-DC converters, motor drivers, and power supply units. Thanks to its fast switching capabilities, the IRF1010 is well-suited for high-frequency circuits, reducing switching losses and enabling efficient operation in demanding environments. The rugged construction provides high avalanche energy capabilities, ensuring reliable performance even in scenarios with voltage or current spikes.
Features:-
- Advanced process technology
- Ultra-low on-resistance
- Dynamic dv/dt rating
- Fast switching
