IRF1404 40V 202A N-Channel HEXFET Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 40V
- Continuous Drain Current (Id): 202A
- Drain-Source Resistance (Rds On): 4mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 196 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 333W
SKU: PB8542A
IRF1404 40V 202A N-Channel HEXFET Power MOSFET (TO-220 Package)
The IRF1404 is a 40V, 202A N-Channel HEXFET Power MOSFET packaged in a TO-220 package, designed to deliver excellent performance in high-current applications. With a drain-to-source voltage rating of 40V, it is optimized for use in systems that require efficient switching with relatively low voltage but high current demands. The IRF1404 is commonly used in power supplies, motor drives, and other power conversion circuits where high efficiency and low switching losses are essential. One of the standout features of the IRF1404 is its impressive 202A continuous drain current rating, which allows it to handle significant current levels without overheating. This makes it suitable for high-power switching applications such as DC-DC converters, motor control circuits, and power amplifiers. The low on-resistance of this MOSFET further contributes to reduced conduction losses, enhancing the overall efficiency of the system in which it is used. The TO-220 package provides optimal thermal management, enabling the IRF1404 to dissipate heat effectively, even during high-current operation, ensuring reliability and longevity of the device. The package design is also ideal for easy integration into power electronics circuits.
Features:-
- Dynamic dV/dt rating
- Ultra low on-resistance
- Fast switching
- Ease of paralleling
