IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 169A
- Drain-Source Resistance (Rds On): 5.3mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 260 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W
SKU: LN8542A
IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)
The IRF1405 is a 55V, 169A N-Channel HEXFET Power MOSFET housed in a TO-220 package. This MOSFET is designed for high-current, low-voltage applications, making it an excellent choice for power electronics that require efficient switching and high performance. With a drain-to-source voltage rating of 55V, the IRF1405 can be used in systems where the voltage is relatively low but the current demands are high, such as motor drives, DC-DC converters, and power amplifiers. The 169A continuous drain current rating is one of the key features of this MOSFET, which provides a significant capacity for handling large currents without overheating. The low on-resistance of the IRF1405 contributes to reduced conduction losses during operation, enhancing the overall efficiency of the circuit, especially in power-hungry applications like switch-mode power supplies (SMPS) and motor control circuits. The TO-220 package ensures optimal thermal performance, allowing the MOSFET to dissipate heat efficiently, which is crucial when dealing with high currents and maintaining the reliability of the device during extended use. The design also facilitates easy integration into larger systems that require robust power switching solutions.
Features:-
- Dynamic dV/dt rating
- Ultra low on-resistance
- Fast switching
- Ease of paralleling
