IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 130A
- Drain-Source Resistance (Rds On): 7.8mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 250 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W
SKU: FM8542A
IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)
The IRF1407 is a 75V, 130A N-Channel HEXFET Power MOSFET in a TO-220 package, designed for high-current and high-efficiency switching applications. This MOSFET is part of the HEXFET series, known for its low on-resistance and superior performance in power electronics. With a drain-to-source voltage rating of 75V, the IRF1407 is suitable for medium-voltage applications, where voltage stresses are lower but high current handling is crucial. Its 130A continuous drain current capability makes it ideal for high-power applications, including motor control, DC-DC converters, power supplies, and inverters. The low on-resistance of the IRF1407 significantly reduces conduction losses, allowing it to operate efficiently and produce less heat under heavy load conditions. This feature is especially important in power systems where minimizing energy loss and heat dissipation is key to maintaining performance and reliability. The TO-220 package provides excellent heat dissipation, ensuring that the MOSFET can operate at high currents without overheating. This makes it ideal for systems that require efficient thermal management in high-performance applications.
Features:-
- Dynamic dV/dt rating
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
