IRF2807 75V 82A N-Channel HEXFET Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 82A
- Drain-Source Resistance (Rds On): 13mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 160 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 230W
SKU: EU8542A
IRF2807 75V 82A N-Channel HEXFET Power MOSFET (TO-220 Package)
The IRF2807 is a 75V 82A N-Channel HEXFET Power MOSFET in a TO-220 package, designed for high-current and high-speed switching applications. With a drain-to-source voltage rating of 75V and a continuous drain current of 82A, this MOSFET is ideal for use in power management circuits, including motor drives, switching power supplies, and DC-DC converters. This N-channel MOSFET features HEX-FET technology, which offers low on-resistance, resulting in minimized conduction losses and improved power efficiency. The IRF2807 is optimized for high-speed switching and has a low gate charge, which makes it well-suited for applications that demand fast switching speeds and efficiency in power conversion systems. It is particularly useful in high-frequency PWM applications, power inverters, and audio amplifiers. The TO-220 package ensures effective heat dissipation, which helps to manage thermal performance in high-power circuits. This robust design ensures that the IRF2807 can handle substantial currents and power levels without compromising reliability.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
