IRF3415 150V 43A N-Channel HEXFET Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 150V
- Continuous Drain Current (Id): 43A
- Drain-Source Resistance (Rds On): 42mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 200 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
SKU: ZX8542A
IRF3415 150V 43A N-Channel HEXFET Power MOSFET (TO-220 Package)
The IRF3415 is a 150V, 43A N-channel HEXFET Power MOSFET engineered for high-efficiency power conversion and switching applications. Housed in the compact and reliable TO-220 package, this MOSFET delivers excellent performance for both low- and medium-power applications requiring fast switching and high current handling. With a maximum drain-to-source voltage of 150V and a continuous drain current capability of 43A, the IRF3415 is suitable for demanding tasks such as DC-DC converters, motor controllers, and power supplies. Its low on-resistance ensures minimal conduction losses, optimizing energy efficiency and reducing heat dissipation in high-current circuits. The device's fast switching speed enables its use in high-frequency designs, while its rugged design ensures reliable performance under stressful conditions, including high current and voltage spikes. Its HEXFET technology contributes to enhanced performance, offering superior thermal resistance and avalanche energy ratings.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
