IRF3710 100V 57A N-Channel HEXFET Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 57A
- Drain-Source Resistance (Rds On): 23mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
SKU: ZB8542A
IRF3710 100V 57A N-Channel HEXFET Power MOSFET (TO-220 Package)
The IRF3710 is a robust N-Channel HEXFET Power MOSFET designed for high-efficiency switching and amplification applications. Encased in a TO-220 package, this device is capable of handling a maximum drain-to-source voltage of 100V and a continuous drain current of up to 57A, making it suitable for medium to high-power applications. The IRF3710 features a low of 0.023Ω, ensuring minimal conduction losses during operation. Its gate threshold voltage ranges between 2.0V and 4.0V, enabling compatibility with a wide range of drive circuits. The device is optimized for fast switching, allowing efficient operation in high-frequency converters, motor drivers, and uninterruptible power supplies (UPS). Engineered with HEXFET technology, the IRF3710 offers superior reliability and thermal performance. It has a high power dissipation capability of 200W, supported by its rugged design and efficient thermal management. These features make it ideal for demanding applications such as DC-DC converters, battery management systems, and power inverters.
Features:-
- Advanced process technology
- Ultra-low on-resistance
- Ease of paralleling
- Simple Drive Requirements
