Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 5.6A
- Drain-Source Resistance (Rds On): 540mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 8.3 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 43W
SKU: FB8542A
IRF510 100V 5.6A N-Channel Power MOSFET (TO-220 Package)
The IRF510 is a versatile N-Channel Power MOSFET designed for medium-power applications, housed in a standard TO-220 package. It supports a maximum drain-to-source voltage (V ????????DS) of 100V and delivers a continuous drain current of up to 5.6A, making it suitable for a wide range of switching and amplification tasks. This MOSFET features a relatively low R????????(????????)DS(on) of 0.54Ω, ensuring efficient operation with reduced power dissipation during conduction. Its fast switching speed and low input capacitance make it ideal for high-frequency applications such as DC-DC converters, motor control circuits, and audio amplifiers. The IRF510 is also commonly used in DIY projects, RF amplifiers, and hobbyist applications due to its ease of availability and straightforward implementation. The TO-220 package provides effective heat dissipation and is compatible with heatsinks for improved thermal management, allowing the MOSFET to perform reliably under continuous operation. While its current-handling capacity is moderate compared to higher-power MOSFETs, the IRF510 excels in low-to-medium power designs where efficiency and simplicity are critical.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
