Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 17A
- Drain-Source Resistance (Rds On): 90mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 37 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 70W
SKU: VN8542A
IRF530 100V 17A N-Channel Power MOSFET (TO-220 Package)
The IRF530 is a 100V, 17A N-channel power MOSFET in a TO-220 package. It is designed for high-efficiency switching applications, handling moderate-to-high power levels in various electronics. This device is commonly used in DC-DC converters, motor drivers, power supplies, and audio amplifiers due to its ability to switch efficiently with low conduction losses. The 100V drain-to-source voltage-rating ensures that the IRF530 is well-suited for circuits with moderate voltage requirements, offering a good balance between power handling and switching speed. A 17A maximum continuous drain current can be used for medium-to-high current applications without overheating or compromising performance. The low on-resistance of the IRF530 helps to reduce power loss during conduction, making it ideal for power-efficient applications where heat dissipation is a concern. The TO-220 package allows for efficient heat dissipation, providing good thermal management and enabling the MOSFET to operate at higher currents without excessive temperature rise.
Features:-
- Dynamic dV/dt rating
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
