IRF5305 55V 31A P-Channel HEXFET Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -55V
- Continuous Drain Current (Id): -31A
- Drain-Source Resistance (Rds On): 60mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 63 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 110W
SKU: AG8542A
IRF5305 55V 31A P-Channel HEXFET Power MOSFET (TO-220 Package)
The IRF5305 is a 55V, 31A P-channel HEXFET Power MOSFET designed for efficient operation in high-current, low-voltage applications. Encased in a durable TO-220 package, this MOSFET is ideal for use in a variety of power management and switching tasks, where its P-Channel design provides unique advantages, such as simplified high-side switching without the need for additional driver circuitry. With a maximum drain-to-source voltage of 55V, the IRF5305 is well-suited for low-voltage DC applications, including battery-powered devices, motor controllers, and load switches. Its high continuous drain current rating of 31A ensures it can handle substantial loads, while its low on-resistance minimizes conduction losses, thereby improving efficiency and reducing heat generation.This MOSFET also features fast switching characteristics, making it ideal for use in high-frequency circuits like DC-DC converters and inverters. Its rugged construction offers excellent avalanche energy and reliability, ensuring dependable performance even in demanding conditions.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
