IRF610 200V 3.3A N-Channel Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 3.3A
- Drain-Source Resistance (Rds On): 1.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 8.2 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 36W
SKU: WO8542A
IRF610 200V 3.3A N-Channel Power MOSFET (TO-220 Package)
The IRF610 is a 200V, 3.3A N-Channel Power MOSFET designed for applications requiring moderate voltage and current handling. Packaged in the TO-220 form factor, it combines ease of use, reliable performance, and effective heat dissipation, making it suitable for a wide range of electronic circuits. This MOSFET features a maximum drain-to-source voltage of 200V and a continuous drain current of 3.3A, making it suitable for low- to medium-power switching applications. With a low on-resistance it reduces conduction losses, improving energy efficiency in power management designs. Its fast switching characteristics are advantageous for high-frequency operations, ensuring reduced switching losses and better system performance. The IRF610 is well-suited for applications like DC-DC converters, motor drives, lighting circuits, and small power supplies. Its robust design allows it to handle inductive loads efficiently, and the TO-220 package ensures proper thermal management in demanding environments. This MOSFET offers good avalanche energy capability and ruggedness, providing reliability in systems exposed to transient conditions. Its combination of compact design and performance makes it ideal for prototyping and final product designs where moderate voltage and current ratings are required.
Features:-
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching