Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 5.2A
- Drain-Source Resistance (Rds On): 0.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 14 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
SKU: DX8542A
IRF620 200V 5.2A N-Channel Power MOSFET (TO-220 Package)
The IRF620 is a reliable N-Channel Power MOSFET designed for medium-power applications, featuring a maximum drain-to-source voltage (V????????DS) of 200V and a continuous drain current rating of 5.2A. Encased in the popular TO-220 package, this MOSFET offers efficient thermal management, supporting extended operation in various circuit designs. With a low R???????? (????????)DS(on) of 1.2Ω, the IRF620 minimizes power losses during conduction, making it suitable for applications requiring moderate efficiency. Its fast switching speed and relatively low gate charge enable its use in high-frequency switching circuits, such as DC-DC converters, motor drivers, and inverters. It is also frequently used in industrial controls, lighting systems, and power supplies due to its robust performance and reliability. The TO-220 package provides a sturdy form factor, allowing for easy integration into designs and compatibility with heatsinks for improved heat dissipation under heavy load conditions. The IRF620 is particularly suited for applications that require higher voltage handling capability without excessive current demands.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
