IRF630 200V 9A N-Channel Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 0.4Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 43 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 74W
SKU: BP8542A
IRF630 200V 9A N-Channel Power MOSFET (TO-220 Package)
The IRF630 is a 200V 9A N-Channel Power MOSFET housed in a TO-220 package, designed for use in high-speed switching applications and power control systems. With its high drain-to-source voltage rating of 200V and a continuous drain current of 9A, it is ideal for medium-power applications that require reliable and efficient performance under moderate voltage and current conditions. This MOSFET features a low on-resistance, which minimizes conduction losses and improves the overall efficiency of the circuits it is used in. The IRF630 is particularly effective in motor drives, DC-DC converters, switching power supplies, and audio amplifiers due to its excellent switching characteristics, including fast switching speeds and low gate charge, making it suitable for applications requiring high-frequency operation. The TO-220 package offers efficient heat dissipation, allowing the device to maintain reliable performance in high-power applications by keeping operating temperatures in check. This makes the IRF630 well-suited for power electronic circuits where thermal management is important.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
