IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 2.5A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 17 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
SKU: YA8542A
IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)
The IRF820 is a 500V, 2.5A N-Channel Power MOSFET in a TO-220 package. Designed for high-voltage applications, this MOSFET is commonly used in switching power supplies, motor control circuits, and amplifier circuits. The IRF820 offers a high drain-to-source voltage rating of 500V, making it ideal for medium- to high-voltage switching applications that require a durable and reliable power MOSFET. This MOSFET features a low on-resistance, which helps reduce conduction losses and improve overall efficiency in power systems. With a drain current of up to 2.5A, it is suitable for low- to moderate-current switching tasks. The TO-220 package ensures good heat dissipation, allowing the MOSFET to operate efficiently even in relatively high-power environments, making it suitable for use in power electronics with moderate thermal demands. Typical applications of the IRF820 include DC-DC converters, motor drivers, switching regulators, and other power management systems where high voltage and moderate current handling are essential. The IRF820's robustness, combined with its fast switching characteristics and low gate charge, makes it a reliable choice for high-voltage switching circuits, inverter designs, and power supplies.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
