Specification:-
- Package: TO220-3
- Drain-Source Voltage: 500 V
- Gate-Source Voltage-Continuous ±30 V
- Drain Current-Continuous: 25°C = 5 A
- Drain Current-continuous: 100°C = 3.2A
- IDM Drain Current-Single Plused 20 A
- PD Total Dissipation @TC=25℃ 74 W
- Tj Max. Operating Junction Temperature 150 ℃
- Tstg Storage Temperature -55~150 ℃
SKU: VZ8517A
IRF830A N-Channel 500V 5A 74W Through Hole TO-220AB
The IRF830A is a high-voltage N-Channel MOSFET designed for applications requiring efficient switching and robust performance. With a maximum drain-to-source voltage (Vds) of 500V and a continuous drain current (Id) rating of 5A, it is ideal for high-power circuits such as power supplies, motor drivers, and industrial automation systems. This transistor can dissipate up to 74W of power, ensuring reliable operation under demanding conditions when adequate heat sinking is provided. The IRF830A is housed in the standard TO-220AB through-hole package, which offers excellent thermal conductivity and mechanical stability. Its low on-resistance (Rds(on)) minimizes power losses during operation, enhancing overall efficiency. The device also features fast switching speeds, which are crucial for high-frequency switching applications like pulse-width modulation (PWM) circuits and inverter systems. This MOSFET is designed to handle high voltage and current levels while maintaining stability and reliability, making it a popular choice for engineers in both industrial and consumer electronics. Its rugged design ensures durability in harsh environments, and its compatibility with standard heat sinks simplifies thermal management. The IRF830A provides a versatile solution for high-voltage, high-power applications.
Feature:-
- Low On-Resistance
- High Voltage Rating
- High Current Capability
