IRF840 500V 8A N-channel Power Mosfet


Specification
  1. N-Channel Power MOSFET
  2. Continuous drain current : 8A
  3. Gate threshold voltage : 10V (limit = ±20V)
  4. Drain to source breakdown voltage: 500V
  5. Drain source resistance : 0.85 Ohms
  6. Rise time and fall time : 23nS and 20nS

46.61 (Incl. Tax)

46.61(+18% GST extra)

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IRF840 500V 8A N-channel Power Mosfet

IRF840 POWER MOSFET- N-Channel enhancement mode, silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

The IRF840 is an N-Channel Power MOSFET that can switch loads up to 500V. The MOSFET could switch loads that consume up to 8A, it can turn on by providing a gate threshold voltage of 10V across the Gate and Source pin. Since the MOSFET is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with an I/O pin of a CPU.

One considerable disadvantage of the IRF840 MOSFET is its high on-resistance (RDS) value which is about 0.85 ohms. Hence this MOSFET cannot be used in applications where high switching efficiency is required. The MOSFET requires a driver circuit to provide 10V to the gate pin of this MOSFET the simplest driver circuit can be built using a transistor. It is relatively cheap and has very low thermal resistance, added to this the MOSFET also has good switching speeds and hence can be used in DC-DC converter circuits.

Applications
  • Switching high power devices
  • Inverter circuits
  • DC-DC converters
  • Control speed of motors
  • LED dimmers or flashers
  • High-speed switching applications
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