IRF9520 -100V 6.8A P-Channel Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -100V
- Continuous Drain Current (Id): -6.8A
- Drain-Source Resistance (Rds On): 0.48 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 18 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 48W
SKU: RP8542A
IRF9520 -100V 6.8A P-Channel Power MOSFET (TO-220 Package)
The IRF9520 is a 100V, 6.8A P-Channel Power MOSFET packaged in a TO-220 form factor, designed for medium power applications. With a maximum drain-to-source voltage of 100V and a continuous drain current of 6.8A, this MOSFET is suitable for use in power management systems that require efficient high-side switching in circuits operating at moderate voltages. One of the notable features of the IRF9520 is its low on-resistance, which minimizes conduction losses, contributing to improved energy efficiency in power conversion applications. The P-channel design makes it an excellent choice for high-side switch configurations, where it can be easily controlled by a low-side gate driver. This MOSFET is ideal for use in a variety of applications, such as DC-DC converters, motor control circuits, battery management systems, and power regulation circuits, where low switching losses and high current handling are important. Its TO-220 package ensures good thermal performance, which is essential for handling the heat generated during operation in high-power environments.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
