IRF9610 200V 1.8A P-Channel HEXFET Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -18A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 11 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 20W
SKU: JT8542A
IRF9610 200V 1.8A P-Channel HEXFET Power MOSFET (TO-220 Package)
The IRF9610 is a 200V, 1.8A P-channel HEXFET Power MOSFET housed in a TO-220 package, designed for high-efficiency switching applications. With a maximum drain-to-source voltage of 200V and a continuous drain current of 1.8A, this MOSFET is suitable for medium-power applications, particularly in circuits requiring high-voltage control and switching. Key features of the IRF9610 include its low on-resistance, which minimizes conduction losses and improves overall system efficiency. The P-channel HEXFET technology used in this MOSFET enables fast switching and high performance, especially in high-side switching applications where P-channel MOSFETs are often preferred for ease of gate drive. The TO-220 package provides excellent thermal management, allowing the MOSFET to operate in environments with moderate heat dissipation requirements. This makes the IRF9610 suitable for DC-DC converters, power management systems, motor control, and other power regulation circuits that demand high voltage and moderate current handling.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche-rated
- Fast switching
- Ease of paralleling
