IRF9Z34 60V 18A P-Channel Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -60V
- Continuous Drain Current (Id): -18A
- Drain-Source Resistance (Rds On): 0.14 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 34 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 88W
SKU: FN8542A
IRF9Z34 60V 18A P-Channel Power MOSFET (TO-220 Package)
The IRF9Z34 is a 60V, 18A P-Channel Power MOSFET housed in a TO-220 package, designed for use in power switching and amplification applications. With a maximum drain-to-source voltage of 60V and a continuous drain current of 18A, this MOSFET is ideal for applications that require efficient handling of moderate power levels. Key features of the IRF9Z34 include low on-resistance ensuring reduced conduction losses, and fast switching capabilities, enabling improved performance in high-frequency circuits. Its P-channel configuration makes it particularly useful in applications where simplicity in gate driving is needed, such as high-side switching in low-voltage systems. The TO-220 package provides robust mechanical and thermal performance, with excellent heat dissipation characteristics, ensuring the MOSFET can handle significant power levels while maintaining stability. It is a versatile component suitable for use in linear regulators, DC-DC converters, load switches, and battery management systems.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
