Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 180A
- Drain-Source Resistance (Rds On): 4.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 370W
SKU: UO8542A
IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)
The IRFB4110 is a high-performance N-Channel HEXFET Power MOSFET designed for applications requiring high efficiency and power handling. Encased in a standard TO-220 package, this MOSFET is capable of handling a maximum drain-to-source voltage (V????????DS) of 100V and delivering a continuous drain current of up to 180A under optimal conditions, making it ideal for heavy-duty applications. With an extremely low R???????? (????????) DS(on) of 4.5mΩ, the IRFB4110 minimizes conduction losses, ensuring superior efficiency in power switching circuits. This feature, combined with its fast switching speed, makes it a preferred choice for high-frequency and high-current operations. The IRFB4110 is widely utilized in various applications, including motor drives, DC-DC converters, electric vehicle systems, and power inverters. Its robust construction allows it to handle high-energy pulses, making it suitable for environments where reliability is crucial. Additionally, the TO-220 package provides efficient thermal management, ensuring that the MOSFET remains stable under continuous high-power usage.
Features:-
- Uninterruptible power supply
- High-speed power switching
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
