IRFBC30 600V 3.6A N-Channel Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 3.6A
- Drain-Source Resistance (Rds On): 2.2Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 31 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 74W
SKU: DG8542A
IRFBC30 600V 3.6A N-Channel Power MOSFET (TO-220 Package)
The IRFBC30 is a 600V, 3.6A N-Channel Power MOSFET housed in a TO-220 package, designed for high-voltage applications with moderate current requirements. It features a drain-to-source voltage rating of 600V, making it suitable for power systems that require handling high voltages, such as offline power supplies, industrial equipment, and lighting systems. Its continuous drain current of 3.6A ensures reliable performance for medium power loads. This MOSFET offers low on-resistance reducing power losses during operation and enhancing overall efficiency. It is engineered with fast switching capabilities, which are essential for high-frequency applications like switching power supplies, inverters, and pulse-width modulation (PWM) controllers. Its low gate charge ensures minimal driving energy, making it compatible with a wide range of control circuits. The robust TO-220 package provides effective heat dissipation, ensuring the MOSFET operates efficiently under thermal stress. Its compact yet durable design allows easy integration into various circuit boards, particularly in systems where space and thermal management are critical.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
