IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 6.2A
- Drain-Source Resistance (Rds On): 1.2Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 60 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 125W
SKU: RE8543A
IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)
The IRFBC40 is a high-voltage N-channel power MOSFET designed for robust performance in a wide range of electronic and industrial applications. With a maximum drain-to-source voltage of 600V and a continuous drain current of 6.2A, this MOSFET is well-suited for high-voltage, medium-power circuits. It features low-enabling efficient operation with reduced power losses, which is crucial in energy-sensitive applications. Encased in the TO-220 package, the IRFBC40 offers excellent thermal conductivity, making it capable of handling significant power dissipation while maintaining optimal performance. The device supports fast switching due to its low gate charge, enhancing efficiency in high-frequency operations such as switch-mode power supplies (SMPS), lighting ballast systems, and motor control circuits. It is also capable of withstanding high-energy pulses, thanks to its rugged silicon design and avalanche energy rating.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
