IRFBE30 800V 4.1A N-Channel Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 800V
- Continuous Drain Current (Id): 4.1A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 78 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 125W
SKU: PS8542A
IRFBE30 800V 4.1A N-Channel Power MOSFET (TO-220 Package)
The IRFBE30 is an 800V, 4.1A N-Channel power MOSFET housed in a TO-220 package, designed for efficient switching and power management in high-voltage applications. This MOSFET is typically used in high-voltage circuits, such as switch-mode power supplies (SMPS), inverters, motor control systems, and other applications that require high-voltage handling with low power loss. With a maximum drain-to-source voltage of 800V, the IRFBE30 is well-suited for switching high-voltage loads while maintaining performance stability. The continuous drain current of 4.1A makes it appropriate for moderate power levels, supporting a wide range of applications in consumer electronics and industrial systems. Key features of the IRFBE30 include its low on-resistance which helps minimize conduction losses and improve efficiency. It also boasts fast switching capabilities, allowing for higher-frequency operation with reduced switching losses. The TO-220 package provides effective heat dissipation, ensuring reliable operation in environments with high power dissipation and thermal stress.
Features:-
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
