IRFD9113 P-Channel 60V 600mA Through Hole 4-HVMDIP MOSFET

IRFD9113 P-Channel 60V 600mA Through Hole 4-HVMDIP MOSFET

The IRFD9113 is a P-channel MOSFET designed for efficient switching and amplification in low-power electronic circuits. With a maximum drain-to-source voltage (Vds) of 60V and a current-handling capacity of 600mA, this device is suitable for a variety of switching applications. Its compact 4-lead HVMDIP (High Voltage Miniature Dual In-line Package) form factor allows for easy integration into through-hole PCB designs. This MOSFET features low on-resistance and fast switching characteristics, making it ideal for applications where efficiency and performance are critical. Its P-Channel design allows for simplified drive circuitry in high-side switching applications. The IRFD9113 can be used in load switching, power management, and DC-DC converter circuits, as well as in motor control and other low-power electronic systems.

Features:-

• Throuh-hole 4-lead HVMDIP for ease of mounting.
• Optimized for high-speed operation.
• Low on-resistance for reduced power losses.