IRFP044N 55V 53A N-Channel HEXFET Power MOSFET (TO-247 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 53A
- Drain-Source Resistance (Rds On): 0.020 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 61 nC
- Operating Temperature Range: -55 to 175°C
- Power Dissipation (Pd): 120W
SKU: DD8543A
IRFP044N 55V 53A N-Channel HEXFET Power MOSFET (TO-247 Package)
The IRFP044N is a high-performance N-channel HEXFET Power MOSFET designed to meet the demands of modern high-power electronic applications. With a maximum drain-to-source voltage of 55V and a continuous drain current capacity of 53A, it is ideal for use in power-intensive circuits. The device features a low of approximately 0.018 ohms, ensuring minimal power dissipation and excellent efficiency during operation. This characteristic makes it suitable for applications requiring fast switching and high reliability, such as motor drives, inverters, and power supplies. Packaged in a durable TO-247 form factor, the IRFP044N provides superior thermal performance and ease of integration in compact designs. Its robust construction ensures reliable operation under high current and voltage conditions, while the optimized gate charge and fast switching speed enhance efficiency in dynamic environments. Additionally, the MOSFET is designed to handle transient conditions and offers excellent performance in both continuous and pulsed operations.
Features:-
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
