IRFP054N 55V 81A N-Channel HEXFET Power MOSFET (TO-247 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 81A
- Drain-Source Resistance (Rds On): 0.012 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 170W
SKU: HG8542A
IRFP054N 55V 81A N-Channel HEXFET Power MOSFET (TO-247 Package)
The IRFP054N is a 55V, 81A N-Channel HEXFET Power MOSFET, optimized for high-current, low-voltage power applications. Packaged in the rugged TO-247 package, it is designed to handle substantial power loads with high efficiency and excellent thermal performance. This MOSFET features a very low on-resistance of approximately 0.014Ω, significantly reducing conduction losses, making it ideal for applications requiring high power efficiency. With a drain-to-source voltage rating of 55V and a continuous drain current of 81A, the IRFP054N is well-suited for demanding applications such as motor controllers, power supplies, and DC-DC converters. The device exhibits excellent switching characteristics, enabling efficient performance in high-frequency circuits. Its high avalanche energy rating ensures reliable operation even under stress conditions like voltage surges. The TO-247 package provides efficient heat dissipation, making it ideal for applications with elevated power dissipation requirements.
Features:-
- Advanced process technology
- Ultra-low on-resistance
- Dynamic dv/dt rating
- Fast switching
