IRFP22N60K 600V 22A N-Channel Power MOSFET (TO-247 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 22A
- Drain-Source Resistance (Rds On): 0.28 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 150 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 370W
SKU: EY8542A
IRFP22N60K 600V 22A N-Channel Power MOSFET (TO-247 Package)
The IRFP22N60K is a 600V, 22A N-channel power MOSFET, housed in a TO-247 package, designed for use in high-voltage and high-current applications. With its drain-to-source voltage rating of 600V and a continuous drain current of up to 22A, this MOSFET is well-suited for applications such as switch-mode power supplies (SMPS), motor drives, solar inverters, and industrial equipment. This MOSFET features low on-resistance ensuring minimal conduction losses, which improves overall efficiency. The device also offers excellent switching characteristics, including fast switching speeds and low gate charge, making it suitable for high-frequency operations in power circuits. These attributes contribute to reduced energy losses during both conduction and switching phases. The TO-247 package provides robust thermal and mechanical performance, enabling effective heat dissipation in high-power applications. Its design ensures reliability under demanding conditions, allowing the MOSFET to operate efficiently even at elevated temperatures.
Features:-
- Fully characterized capacitance and avalanche voltage and current
- Enhanced body diode dV/dt capability
- Fast switching
- Ease of paralleling
