IRFP2907 75V 209A N-Channel Power MOSFET (TO-247 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 209A
- Drain-Source Resistance (Rds On): 4.5mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 620 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 470W
SKU: SM8542A
IRFP2907 75V 209A N-Channel Power MOSFET (TO-247 Package)
The IRFP2907 is a 75V, 209A N-Channel Power MOSFET housed in a TO-247 package designed to provide high-efficiency performance in power switching applications. With its low resistance, it minimizes power loss during conduction, making it ideal for applications where energy efficiency is critical. This MOSFET has a maximum drain-to-source voltage 75V and can handle up to 209A of continuous drain current, which makes it suitable for use in high-power applications, such as motor control, DC-DC converters, and audio amplification systems. The IRFP2907's ability to handle high current at relatively low voltages allows for optimal performance in low-voltage, high-current systems. The TO-247 package of the IRFP2907 is designed for robust thermal dissipation, ensuring that the MOSFET can operate at high power levels without overheating. This package configuration provides excellent heat sinking capabilities, which is essential for maintaining device reliability and longevity during high-performance operations.
Features:-
- Dynamic dV/dt Rating
- Fast switching
- Advanced process technology
- Ultra Low On-Resistance
- Fully Avalanche Rated
