IRFPG50 1000V 6.1A N-Channel Power MOSFET (TO-247 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Continuous Drain Current (Id): 6.1A
- Drain-Source Resistance (Rds On): 20Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 190 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 190W
SKU: ME8542A
IRFPG50 1000V 6.1A N-Channel Power MOSFET (TO-247 Package)
The IRFPG50 is a 1000V, 6.1A N-Channel Power MOSFET in a TO-247 package designed for use in high-voltage power switching applications. With its 1000V drain-to-source voltage rating, it is capable of handling very high voltage levels, making it ideal for applications such as DC-AC inverters, motor control, power supplies, and high-voltage power amplifiers. This N-channel MOSFET is widely used in high-voltage switching circuits, providing excellent efficiency for low-side switching configurations. The 6.1A continuous drain current rating is suitable for medium-power applications where high voltage handling is required while maintaining a manageable current flow. The IRFPG50 features low on-resistance, ensuring efficient operation with minimal power loss and heat generation. This is important for high-efficiency designs, where reduced thermal dissipation leads to improved overall performance and reliability.
Features:-
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Fast switching
- Ease of paralleling
