IRFZ48N 55V 64A N-Channel Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 64A
- Drain-Source Resistance (Rds On): 0.014 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 81 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 130W
SKU: OQ8542A
IRFZ48N 55V 64A N-Channel Power MOSFET (TO-220 Package)
The IRFZ48N is a 55V, 64A N-Channel Power MOSFET designed for high-performance switching and amplification applications in power electronics. Its robust specifications make it ideal for use in motor control, power supply designs, DC-DC converters, and other high-current switching applications. This MOSFET features a low on-resistance, enabling efficient conduction with minimal power loss. It also supports high pulsed current capabilities, making it suitable for applications requiring dynamic load handling. The device's high-speed switching characteristics enhance system efficiency, especially in applications where fast switching is critical. The IRFZ48N is encapsulated in a TO-220 package, which offers excellent thermal performance and allows for straightforward heat dissipation via external heatsinks. This makes it suitable for high-power applications where thermal management is essential. Additional features include rugged avalanche characteristics and a robust body diode, ensuring durability and reliability in demanding environments. With a maximum drain-source voltage of 55V, a continuous drain current of 64A, and low gate threshold voltage, the IRFZ48N is versatile and compatible with logic-level drive circuits.
Features:-
- Fast switching
- Advanced process technology
- Ultra Low On-Resistance
- Fully Avalanche Rated
