Specification:-
- Package: SOIC8 (0.154", 3.90mm)
- Transistor Polarity: P-Channel
- Number of Channels: 1 Channel
- Continuous Drain Current: 3 A
- Drain-Source Breakdown Voltage: 60 V
- Drain-Source Resistance: 78 mOhms
- Gate-Source Threshold Voltage: 3 V
- Gate Charge: 22 nC
- Power Dissipation: 2.5 W
SKU: FF8517A
NDS9407 P-Channel 60V 3A 2.5W Surface Mount Transistor 8-SOIC
The NDS9407 is a P-Channel MOSFET transistor designed for efficient power switching and low-loss applications. This device can handle a maximum drain-to-source voltage (Vds) of 60V and supports a continuous drain current of 3A under specified operating conditions. With its low on-resistance (Rds(on)), the NDS9407 minimizes power dissipation, ensuring higher energy efficiency in switching applications. Encased in an 8-SOIC (Small Outline Integrated Circuit) package, the transistor is well-suited for surface-mount technology (SMT), enabling compact and high-density PCB designs. Its thermally efficient package supports a power dissipation rating of up to 2.5W, making it capable of handling moderate power loads while maintaining reliability. This MOSFET is designed for fast switching performance, reducing transition losses and enabling higher operating frequencies in circuits. It features a gate threshold voltage appropriate for integration with low-voltage logic systems, ensuring compatibility with a wide range of control circuits. The P-Channel configuration is particularly advantageous for high-side switching applications where a simpler drive circuitry is desired.
Feature:-
- P-Channel MOSFET Configuration
- Suitable for DC-DC converters
- Low On-Resistance:
- Fast Switching Performance
- Designed for effective heat dissipation under rated power conditions
