SI2308 N-Channel SMD MOSFET (SOT-23 Package)
Specification:-
- Drain-Source Voltage: 60 V
- Gate-Source Voltage: ± 20 V
- Drain Current Continuous: 2.3 A
- Drain Current Pulsed (tp≤10µS): 8 A
- Drain Power Dissipation: 1.66 W
- Storage Temperature Range: -55 to +15°C
SKU: AU8542A
SI2308 N-Channel SMD MOSFET (SOT-23 Package)
The SI2308 is an N-channel MOSFET designed for small-signal switching and power management applications. Packaged in the compact SOT-23 form factor, it is optimized for use in space-constrained designs such as portable devices, battery-powered circuits, and other electronics requiring high performance in a small footprint. This MOSFET operates with a maximum drain-to-source voltage of 30V and supports a continuous drain current of 4.5A under ideal conditions. Its low resistance, typically in the range of a few milliohms, ensures minimal power loss during operation, which is particularly advantageous for energy-efficient designs. The device also supports fast switching speeds, making it suitable for high-frequency applications.
Features:-
- Low gate threshold voltage
- High efficiency due to reduced conduction and switching losses.
- Compact SOT-23 package, ideal for surface-mount technology (SMT) applications.
