TRANSISTORS

BC559, -100mA, -65V TO-92 Package General purpose PNP transistor pack of 10 pcs

Specification

1. Type:   Transistor
2. Polarity:   PNP
3. Collector - Emitter voltage:  -65 volts
4. Collector current:   -100 mA
5. Gain H(fe):  110/800
6. Power dissipation:  625 mW
7. F(t) minimum:  50 MHz
8. Package: TO-92
9. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

BC556, -100mA, -65V TO-92 Package General purpose PNP transistor pack of 10 pcs

Specification

1. Type:   Transistor
2. Polarity:   PNP
3. Collector - Emitter voltage: -65volts
4. Collector current:   -100 mA
5. Gain H(fe):  110/800
6. Power dissipation:  625 mW
7. F(t) minimum:  50 MHz
8. Package: TO-92
9. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

TIP41C General purpose NPN transistor packs of 50pcs

Specification

1. Transistor type:  General purpose NPN transistor
2. Max Collector Current:  6A
3. Max Collector-Emitter Voltage  :  100V
4. Max Collector-Base Voltage  :  100V
5. Max Emitter-Base Voltage  :  5V
6. Max Collector Dissipation  :  65W
7. Max Transition Frequency  :  3MHz

MPSA13 500mA 30V TO-92 Package NPN Darlington Transistors pack of 10

Specification

1. Package Type: TO-92
2. Transistor Type: NPN Darlington
3. Max Collector Current (IC): 500 mA
4. Max Collector-Emitter Voltage (VCE): 30V
5. Max Collector-Base Voltage (VCB): 30V
6. Max Emitter-Base Voltage (VEBO): 10V
7. Max Collector Dissipation (Pc): 625 milliWatt
8. Max Transition Frequency (fT): 125 MHz
9. Minimum & Maximum DC Current Gain (hFE): 5000
10. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

MPSA42 500mA 300V TO-92 Package NPN Darlington Transistors pack of 10 pcs

Specification

1. Package Type: TO-92
2. Transistor Type: NPN Darlington
3. Collector emitter voltage: 300V
4. Collector base voltage: 300V
5. Emitter base voltage: 6V
6. Collector current: 500mA
7. Power dissipation: 625mW

2SC1623 NPN SOT23-3L Bipolar Transistors Pack of 5pcs

Specification :-

• Polarity: NPN
• Maximum Collector-Base Voltage |BVCBO|: 60 V
• Maximum Collector-Emitter Voltage |BVCEO|: 50 V
• Maximum Emitter-Base Voltage |BVEBO|: 5V
• Forward Current Transfer Ratio (hFE), MIN: 90
• Collector Dissipation: Pcw =200mW

2N7002 60V SOT-23 Field Effect Transistors Pack of 10pcs

Specification :-

• Drian Source Voltage - 60v
• Drian Current - 115mA
• Static Drain–Source On Resistance - RDS(on)1=VGS=10V ID=800mA
• Fast Switching speed
• Case: SOT23

BC558, -100mA, -30V TO-92 Package General purpose PNP transistor pack of 10 pcs

Specification

1. Type:   Transistor
2. Polarity:   PNP
3. Collector-Emitter voltage:  -30 volts
4. Collector current:   -100 mA
5. Gain H(fe):  110/800
6. Power dissipation:  625 mW
7. F(t) minimum:  50 MHz
8. Package: TO-92
9. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

Si2302ds 20V SOT-23 N-Channel Mosfet Pack of 10pcs

Specification :-

• Drian Source Voltage - 20v
• Drian Current - ±8mA
• Static Drain–Source On Resistance - RDS(on)1=VGS=4.5V ID=3.6AmA
• Fast Switching speed
• Case: SOT23

S8050LT1 NPN SOT-23 Bipolar Transistors Pack of 5pcs

Specification:-

1. Type of transistor: NPN
2. Polarity: Bipolar
3. Collector-emitter voltage (BVCEO): 25V
4. Power dissipation: 300mW
5. Case: SOT23
6. Frequency: 150MHz
7. Gain H(fe): 120/350
8. Collector current:  500mA

T1117-3.3 SOT 223 Voltage Regulator Pack of 5pcs

Specification :-

1. High-Efficiency Linear Regulators
2. Post Regulators for Switching Supplies
3. Built-in thermal shutdown
4. Output Voltage- 3.267-3.333

MMBT2222ALT1, 600mA, 40V SOT-23 NPN Bipolar transistors pack of 5 pcs

Specification

1. Type of transistor: NPN
2. Polarisation: bipolar
3. Collector-emitter voltage: 40V
4. Power dissipation: 300mW
5. Case: SOT23
6. Frequency: 300MHz
7. Gain H(fe): 100/360
8. Collector current:  600mA