IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Continuous Drain Current (Id): 3.1A
- Drain-Source Resistance (Rds On): 5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 80 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 125W
SKU: WY8542A
IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)
The IRFBG30 is a 1000V, 3.1A N-Channel Power MOSFET designed for high-voltage applications that require efficient switching and reliable performance. Packaged in the standard TO-220 form factor, it is suitable for applications where space and heat dissipation are important considerations. With a drain-to-source voltage rating of 1000V and a continuous drain current of 3.1A, the IRFBG30 is well-suited for high-voltage circuits such as switch-mode power supplies (SMPS), motor drives, and industrial control systems. Its low on-resistance ensures minimized conduction losses, improving the efficiency of the overall system. The MOSFET features fast switching capabilities, making it ideal for high-frequency applications. It has a robust avalanche rating, ensuring reliable operation under transient conditions or voltage spikes. Additionally, the TO-220 package provides efficient heat dissipation and ease of mounting, which helps in thermal management during extended operation.
Features:-
- Advanced process technology
- Ultra-low on-resistance
- Dynamic dv/dt rating
- Fast switching
