Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 30A
- Drain-Source Resistance (Rds On): 0.075 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 123 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 214W
SKU: VE8542A
IRFP250N 200V 30A N-Channel Power MOSFET (TO-247 Package)
The IRFP250N is a high-performance N-Channel Power MOSFET designed to meet the demands of high-power applications. Encased in the reliable TO-247 package, this MOSFET is capable of withstanding a maximum drain-to-source voltage (V????????DS) of 200V and delivering a continuous drain current of up to 30A. It features a low R ????????(????????) DS(on) of 0.085Ω, which ensures minimal conduction losses, making it highly efficient for power-intensive operations. The IRFP250N is optimized for both switching and conduction performance, making it suitable for high-speed applications. Its robust construction supports fast switching times and high-energy pulse handling, ensuring reliable operation even in demanding conditions. The TO-247 package enhances heat dissipation, maintaining device stability under continuous high-current loads. This MOSFET is widely used in applications such as motor controllers, DC-DC converters, inverters, and uninterruptible power supplies (UPS). It is also suitable for industrial and renewable energy systems where efficient energy management and high power handling are critical.
Features:-
- Dynamic dV/dt rating
- Fast switching
- Ease of paralleling
- Simple Drive Requirements
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