SKD502T N-Channel Power MOSFET
Specification:-
- Type of Control Channel: N-Channel
- Maximum Power Dissipation (Pd): 174 W
- Maximum Drain-Source Voltage |Vds|: 85 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 120 A
- Maximum Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 55 nC
- Rise Time (tr): 38.9 nS
- Drain-Source Capacitance (Cd): 1057 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm
SKU: UN8542A
SKD502T N-Channel Power MOSFET
The SKD502T is an N-channel power MOSFET designed for high-voltage and high-efficiency switching applications. This device offers robust performance with a high drain-to-source voltage rating and a substantial maximum current-carrying capacity, making it suitable for demanding power electronics applications such as motor drives, power supplies, inverters, and lighting systems. Key features of the SKD502T include low on-resistance, which minimizes conduction losses, and high-speed switching capabilities, which improve efficiency in fast-switching circuits. Additionally, it is engineered to handle high pulse currents, ensuring reliable performance in circuits with transient or surge conditions. Its rugged construction provides resilience against avalanche energy and overvoltage stresses. Housed in a TO-3P package, the MOSFET supports efficient heat dissipation, allowing it to operate under high-power conditions while maintaining stable thermal performance. This package also enables straightforward mounting to heatsinks, further enhancing thermal management.
Features:-
- Highly reliable
- Small in size
- Fast switching
- Ease of paralleling
