TRANSISTORS

C1674 Epitaxial NPN silicon transistor pack of 20pcs

Specification:-

1. Transistor type  :  High voltage NPN transistor
2. Maximum Collector Power Dissipation  :   0.25W
3. Maximum Collector-Base Voltage  :  30V
4. Maximum Collector-Emitter Voltage  :  20V
5. Maximum Emitter-Base Voltage  :  4V
6. Maximum Collector Current   :  0.02A
7. Transition Frequency  :  300 MHz
8. Collector Capacitance  :  2 pF

C2073 NPN power transistor packs of 100pcs

Specification:-

1. Transistor type:  NPN power transistor
2. Collector-Emitter Voltage:  150V
3. Collector-Base Voltage:  150V
4. Emitter-Base Voltage:  5V
5. Collector Current:  1.5A
6. Collector Dissipation:  25W

D965 Bipolar NPN transistor packs of 100pcs

Specifications

1. Transistor type  :  NPN transistor
2. Collector-Emitter Voltage  :  20V
3. Collector-Base Voltage  :  40V
4. Collector Current  :  5A
5. Collector Dissipation  :  0.75W
6. DC Current Gain  :  230 to 600
7. Transition Frequency  :  150MHz

H20R1203 20A 1200V Transistor IGBT (TO-247 Package)

Specifications:-

• Package Type: TO247
• Power Consumption: 155 W
• Maximum Collector Current: 20 A
• Maximum Collector Emitter Voltage: 1200 V
• Mount Type: Through Hole
• DC Current Gain: 1000

TIP31C NPN Transistors 100V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 100V
• Continuous Base Current (IB) - 1A
• Continuous Collector Current (IC) - 3A
• Emitter cut-off current (IC) - 500mA
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 3MHz

BC557, -100mA, -45V TO-92 Package General purpose PNP transistor pack of 10pcs

Specification

1. Type:   Transistor
2. Polarity:   PNP
3. Collector - Emitter voltage:  -45 volts
4. Collector current:   -100 mA
5. Gain H(fe):  100/800
6. Power dissipation:  625 mW
7. F(t) minimum:  50 MHz
8. Package: TO-92
9. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

D882 Medium power NPN transistor packs of 100pcs

Specifications:-

1. Transistor type:  D882 Medium power NPN transistor
2. Max Collector Current:  3A
3. Max Collector-Emitter Voltage:  30V
4. Max Collector-Base Voltage:  40V
5. Max Emitter-Base Voltage:  5V
6. Max Collector Dissipation:  10 Watts

15N120NDH Transistor IGBT with Diode 1200V 15A Transistor

Specifications

• Collector-Emitter Voltage: 1200V
• Collector Current: 15A
• Storage Temperature Range: -55 to + 150
• Diode Continuous Forward Current: 15A

BD139 Medium power NPN transistors box of 2000pcs

Specification:-

1. Transistor type  :  Medium power NPN transistor
2. Continuous collector current  :  1.5A
3. Collector-Emitter voltage  :  80 V
4. Collector-Base voltage  :  80V
5. Emitter Base Breakdown Voltage  :  5V
6. DC current gain  :  40 to 160

2N6292 NPN Transistors 70V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 70V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 3A
• Emitter cut-off current (IC) - 500mA
• DC Current Gain (hFE) - 2
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 4MHz

C1674 Epitaxial NPN silicon transistor packs of 100pcs

Specification:-

1. Transistor type  :  High voltage NPN transistor
2. Maximum Collector Power Dissipation  :   0.25W
3. Maximum Collector-Base Voltage  :  30V
4. Maximum Collector-Emitter Voltage  :  20V
5. Maximum Emitter-Base Voltage  :  4V
6. Maximum Collector Current   :  0.02A
7. Transition Frequency  :  300 MHz
8. Collector Capacitance  :  2 pF

2N5551 Amplifier NPN transistor packs of 100pcs

Specification

1. Transistor type  :  Amplifier NPN Transistor
2. High DC Current Gain  :  80
3. Continuous Collector current  :  600mA
4. Collector-Emitter voltage  :  160 V
5. Collector-Base voltage  :  180V
6. Emitter Base Voltage  :  6V
7. Transition Frequency  :  100MHz