H20R1202 Transistor IGBT with Diode 1200V 40A Transistor

H20R1202 Transistor IGBT with Diode 1200V 40A Transistor

The current ratings of this device—1200 V and 40 A—are IGBTs with diodes. The passage of current through an electric circuit is regulated and controlled by this apparatus. Using this component, one can control the power, current, and voltage of an electrical circuit. 40 A, 1200 V, IGBT transistor with diode Spikes in voltage, overvoltages, and short circuits are all within the transistor's design parameters. A rapid-switching N-channel MOSFET that is non-inductive in nature is utilized in its construction. The system is supplied with a rapid power path via an output diode. This device is ideal for circumstances that necessitate a reduced voltage and/or a decreased switching frequency. Voltage in the electrical grid is regulated by power transistors similar to those found in this product. Its purpose is to regulate both low and high voltages. By using this type of power transistor, the current and voltage in a circuit can be regulated. The abbreviation IGBT is used to refer to this specific type of bipolar transistor with an insulated gate.

Features:-

• highly efficient monolithic body diode with a low forward voltage
• very tight parameter distribution
• high ruggedness, temperature-stable behavior