TRANSISTORS
Showing 1–12 of 428 results
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![PMBTA42 100mA NPN Transistors 300V (SOT-23 Package) Pack of 3000]()
PMBTA42 100mA NPN Transistors 300V (SOT-23 Package) Pack of 3000
Rs. 2399.00Specification:-
- Type of transistor: NPN
- Collector-Emitter Voltage, max: 300 V
- Collector-Base Voltage, max: 300 V
- Power Dissipation: 250 mW
- Transition Frequency, min: 50 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-23
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![2SB772 30V 3A 100MHz Bipolar (BJT) Transistor PNP Through Hole SOT-32-3 / TO-225AA / TO-126-3]()
2SB772 30V 3A 100MHz Bipolar (BJT) Transistor PNP Through Hole SOT-32-3 / TO-225AA / TO-126-3
Rs. 500.00Specification:-
- Package/Case: SOT-32-3 / TO-225AA / TO-126-3
- Mount: Through Hole
- Number of Pins: 3
- Polarity: PNP
- Power Max: 12.5 W
- Frequency - Transition: 100 MHz
- Current Collector (Max): 3A
- Voltage Collector Emitter Breakdown (Max): 30V
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![MMBT3904-7-F Bipolar 300MHz Surface Mount NPN Transistor SOT-23-3]()
MMBT3904-7-F Bipolar 300MHz Surface Mount NPN Transistor SOT-23-3
Rs. 500.00Specification:-
- Package: SOT-23-3 / TO-236-3 / SC-59
- No. of Pins: 3Pins
- Transistor Mounting: Surface Mount
- Collector Emitter Voltage Max: 40V
- Continuous Collector Current: 200mA
- Power Dissipation: 250mW
- Transition Frequency: 300MHz
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![EL357N(C)(TA)-G 3750Vrms Channel 4-SMD Gull Wing Opto-isolator Transistor]()
EL357N(C)(TA)-G 3750Vrms Channel 4-SMD Gull Wing Opto-isolator Transistor
Rs. 500.00Specification:-
- Mounting Type: Surface Mount
- Type of optocoupler: optocoupler
- Mounting: SMD
- Number of channels: 1
- Output Type: Transistor
- Insulation voltage: 3.75 kV
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.2V
- Current - DC Forward (If) (Max): 50 mA
- Vce Saturation (Max): 200mV
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![TIP112 100V 2A 2W Through Hole NPN - Darlington Bipolar Transistor TO-220]()
TIP112 100V 2A 2W Through Hole NPN - Darlington Bipolar Transistor TO-220
Rs. 500.00Specification:-
- Package: TO-220-3
- Transistor Type: NPN
- Max Collector Current (IC): 2A
- Max Collector-Emitter Voltage: 100V
- Max Collector-Base Voltage: 100V
- Max Emitter-Base Voltage: 5V
- Max Collector Dissipation: 50 Watt
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![HGT1S7N60A4DS Surface Mount 600V 34A 125W IGBT Transistor TO-263-3]()
HGT1S7N60A4DS Surface Mount 600V 34A 125W IGBT Transistor TO-263-3
Rs. 500.00Specification:-
- Package/Case: TO-263-3 (2 Leads + Tab) / D2PAK
- Type of transistor: IGBT
- Mounting: Surface Mount
- Collector-emitter voltage: 600V
- Collector current: 34A
- Power: 125W
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![2N2369 15V 200mA 625mW Through Hole NPN Bipolar Transistor TO-92]()
2N2369 15V 200mA 625mW Through Hole NPN Bipolar Transistor TO-92
Rs. 500.00Specification:-
- Package: TO-92-3
- Transistor Polarity: NPN
- Configuration: Single
- Maximum DC Collector Current: 500 mA
- Collector- Emitter Voltage Max: 15 V
- Collector- Base Voltage: 40 V
- Emitter- Base Voltage: 4.5 V
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![BBY53E6327 6V Surface Mount Varactors 1-Pair Common Cathode SOT-23]()
BBY53E6327 6V Surface Mount Varactors 1-Pair Common Cathode SOT-23
Rs. 500.00Specification:-
- Package: SOT-23-3 / TO-236-3 / SC-59
- Mounting Style: SMD/SMT
- Diode Type: 1-Pair Common Cathode
- Voltage - Peak Reverse (Max): 6 V
- Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
- Capacitance Ratio: 2.6
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![BD179 NPN 80V 3A 3MHz 30W Through Hole Bipolar Transistor TO-126]()
BD179 NPN 80V 3A 3MHz 30W Through Hole Bipolar Transistor TO-126
Rs. 500.00Specification:-
- Package: SOT-32-3 / TO-225AA / TO-126-3
- Collector-Base Voltage: 80V
- Collector-Emitter Voltage: 80V
- Emitter-Base Voltage: 5V
- Collector Current: 3A
- Base Current: 7A
- Total Dissipation: 30W
- Storage Temperature: -65 to 150 C
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![BC807-40W 45V 500mA 80MHz 200mW Surface Mount PNP Bipolar Transistor SOT-323]()
BC807-40W 45V 500mA 80MHz 200mW Surface Mount PNP Bipolar Transistor SOT-323
Rs. 500.00Specification:-
- Package: SC-70 / SOT-323
- Mounting Style: SMD/SMT
- Transistor Polarity: PNP
- Maximum DC Collector Current: 500 mA
- Collector- Emitter Voltage VCEO Max: 45 V
- Collector- Base Voltage VCBO: 50 V
- Emitter- Base Voltage VEBO: 5 V
- Collector-Emitter Saturation Voltage: 700 mV
- Pd - Power Dissipation: 200 mW
- Gain Bandwidth Product fT: 80 MHz
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![DMG301NU-13 N-Channel 25 V 260mA Surface Mount Signal Field-Effect Transistor SOT-23-3]()
DMG301NU-13 N-Channel 25 V 260mA Surface Mount Signal Field-Effect Transistor SOT-23-3
Rs. 500.00Specification:-
- Package: SOT-23-3 / TO-236-3 / SC-59
- Mounting Style: SMD/SMT
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Continuous Drain Current: 260 mA
- Power Dissipation: 320 mW
- Operating and Storage Temperature Range: -55 °C to 150 °C
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![TIL117 Optoisolator Transistor with Base Output 5000Vrms 1 Channel 6-PDIP (White Color)]()
TIL117 Optoisolator Transistor with Base Output 5000Vrms 1 Channel 6-PDIP (White Color)
Rs. 500.00Specification:-
- Package: PDIP6 (0.300", 7.62mm)
- Isolation Voltage: 5000 Vrms
- Forward Voltage: 1.2V (typical) at 20mA
- Reverse Voltage: 6V
- Forward Current: 60mA (maximum)
- Collector-Emitter Voltage: 30V
- Emitter-Collector Voltage: 7V
- Collector Current: 50mA (maximum)