MOSFET
Showing 1–12 of 105 results
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TC4953A P-Channel 20 V 3A Surface Mount Transistor 8-SOIC
Rs. 500.00Specification:-
- Package: SOIC8 (0.154", 3.90mm)
- Type: P-Channel
- Mounting Type: SMD/SMT
- Drain-source voltage: -20V
- Yang source voltage: ±12
- Drain current: -3
- Drain pulse current: -1
- Operating junction temperature and storage temperature range: -50°C to150°C
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IRF720 400V 3.3A N-Channel Power MOSFET (TO-220 Package)
Rs. 29.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 3.3A
- Drain-Source Resistance (Rds On): 1.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 20 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 50W
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IRF610 200V 3.3A N-Channel Power MOSFET (TO-220 Package)
Rs. 39.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 3.3A
- Drain-Source Resistance (Rds On): 1.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 8.2 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 36W
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IRF510 100V 5.6A N-Channel Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 5.6A
- Drain-Source Resistance (Rds On): 540mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 8.3 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 43W
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IRFP450 500V 14A N-Channel Power MOSFET (TO-247 Package)
Rs. 119.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 14A
- Drain-Source Resistance (Rds On): 370mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 77 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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IRFP054N 55V 81A N-Channel HEXFET Power MOSFET (TO-247 Package)
Rs. 199.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 81A
- Drain-Source Resistance (Rds On): 0.012 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 170W
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IRFP9240 200V 12A P-Channel Power MOSFET TO-247 Package
Rs. 199.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -12A
- Drain-Source Resistance (Rds On): 500mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 44 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
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IRF9610 200V 1.8A P-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -18A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 11 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 20W
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2SK2225 1500V 2A N-Channel Power MOSFET (TO-3PFM Package)
Rs. 389.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1500V
- Continuous Drain Current (Id): 2A
- Drain-Source Resistance (Rds On): 12Ohms
- Gate-Source Voltage (Vgs): 20V
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 50W
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IRF640 200V 18A N-Channel Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 18A
- Drain-Source Resistance (Rds On): 0.15 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
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IRF4905 55V 74A P-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 74A
- Drain-Source Resistance (Rds On): 20mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 180 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)
Rs. 69.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 6A
- Drain-Source Resistance (Rds On): 1.25 Ohms
- Gate-Source Voltage (Vgs): 3.5V
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 45W